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| SLA5070 Absolute maximum ratings Symbol VDSS VGSS ID ID(pulse) EAS* PT FET 1 150 7 N-channel General purpose External dimensions A (Ta=25C) *** SLA Ratings FET 2 +20, -10 15 (PW100s, duty1%) 100 5 (Ta=25C, with all circuits operating, without heatsink) 60 (Tc=25C, with all circuits operating, with infinite heatsink) 25 (Junction-Air, Ta=25C, with all circuits operating) 2.08 (Junction-Case, Tc=25C, with all circuits operating) 1000 (Between fin and lead pin, AC) 150 -40 to +150 Unit V V A A A W W C/W C/W Vrms C C j-a j-c VISO Tch Tstg *VDD=25V, L=3.4mH, ID=7A, unclamped, RG=50, see Fig. E on page 15. sEquivalent circuit diagram 3 FET-1 2 FET-1 5 6 FET-2 7 8 10 FET-2 9 12 FET-2 11 14 FET-2 13 1 15 Pin 4: NC Characteristic curves ID-VDS Characteristics (Typical) FET 1 7 10V 4V ID-VGS Characteristics (Typical) FET 2 FET 1 7 7 10V 4V (VDS=10V) 6 5 6 5 2.6V 6 5 2.8V ID (A) ID (A) ID (A) Tc=125 3 2.4V 3 2.6V 3 2 1 2 1 2.4V 2 1 0 0 1 2 3 4 VGS=2.2V VGS=2.2V 0 0 2 4 6 8 10 0 0 2 4 6 8 10 VDS (V) VDS (V) VGS (V) RDS(ON)-ID Characteristics (Typical) FET 1 100 4V FET 2 200 4V FET 2 7 6 VGS=10V -40C 4 4 4 C 25C (VDS=10V) 80 VGS=10V 150 (m) ID (A) 60 (m) 5 4 3 2 (ON) (ON) 100 RDS 40 RDS 50 20 0 0 1 2 3 4 5 6 7 0 0 0 1 2 3 4 5 6 7 0 1 Tc= 1 125 C 25 C -40C 2 3 4 ID (A) ID (A) VGS (V) RDS(ON)-TC Characteristics (Typical) FET 1 200 (ID=3.5A) FET 2 500 (ID=3.5A) 400 (m) (m) 4V S= 10 V 300 4V VG S= (ON) 100 RDS RDS (ON) VG 10 V 200 100 0 -40 0 50 100 150 0 -40 0 50 100 150 TC (C) TC (C) SLA5070 Electrical characteristics FET 1 Symbol min V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss Crss td (on) tr td (off) tf VSD trr 1.0 7 12 80 85 1600 380 90 35 70 125 90 1.0 320 1.5 105 115 150 100 100 2.0 Specification typ max Unit V nA Conditions ID=100A, VGS=0V VGS=20V, -10V VDS=150V, VGS=0V VDS=10V, ID=250A VDS=10V, ID=3.5A VGS=10V, ID=3.5A VGS=4V, ID=3.5A VDS=10V f=1.0MHz VGS=0V ID=3.5A VDD 70V RL=20 VGS=5V ISD=7A, VGS=0V IF=100mA 1.0 4 9 150 170 870 320 210 25 55 80 50 1.0 500 1.5 200 230 Specification min 150 100 100 2.0 typ max FET 2 Unit V nA Conditions ID=100A, VGS=0V VGS=20V, -10V VDS=150V, VGS=0V VDS=10V, ID=250A VDS=10V, ID=3.5A VGS=10V, ID=3.5A VGS=4V, ID=3.5A VDS=10V f=1.0MHz VGS=0V ID=3.5A VDD 70V RL=20 VGS=5V ISD=7A, VGS=0V IF=100mA (Ta=25C) A V S m m pF pF pF ns ns ns ns V ns A V S m m pF pF pF ns ns ns ns V ns Characteristic curves Re(yfs)-ID Characteristics (Typical) FET 1 30 Safe Operating Area (SOA) FET 2 (VDS=10V) (VDS=10V) FET 1 20 10 ID (pulse) MAX 20 (TC=25C) 10 1m 10 m s (1 s 0m s 10 10 Re (yfs) (S) Re (yfs) (S) TC =- 4 C 0 12 5 C 5 TC =- C 40 12 5 C 5 RDS (on) LIMITED sh ot ) 5 ID (A) 25C 25C 1 0.5 1 1 0.1 0.05 1-circuit operation 0.5 0.3 0.05 0.5 0.3 0.05 0.01 0.5 0.1 0.5 1 5 7 0.1 0.5 1 5 7 1 5 10 50 100 200 ID (A) ID (A) VDS (V) Capacitance-VDS Characteristics (Typical) FET 1 5000 VGS=0V f=1MHz FET 2 5000 VGS=0V f=1MHz FET 2 20 10 5 ID (pulse) MAX (TC=25C) 10 1m 10 m s (1 sh 0 s s Capacitance (pF) Ciss Capacitance (pF) RDS (on) LIMITED 1000 1000 ot ) ID (A) Ciss 500 500 0.5 Coss 0.1 100 Coss Crss 1-circuit operation 0.05 100 Crss 50 50 40 0 10 20 30 40 50 0 10 20 30 40 50 0.01 0.5 1 5 10 50 100 200 VDS (V) VDS (V) VDS (V) IDR-VSD Characteristics (Typical) FET 1 7 7 6 PT-Ta Characteristics FET 2 60 With Silicone Grease Natural Cooling All Circuits Operating 6 5 10V 5 40 ith W IDR (A) IDR (A) PT (W) In 4 3 2 1 4V VGS=0V 4 10 V fin ite He at 3 2 1 4V sin k VGS=0V 20 5 0 0 0.5 1.0 1.5 0 0 0.5 1.0 1.5 Without Heatsink 0 0 50 100 150 VSD (V) VSD (V) Ta (C) |
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